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1. Field of the Invention The present invention relates to a photosensor assembly having an improved photosensitive device having an improved dark current characteristic, a photocurrent converting photosensor substrate having a p-type region and an n-type region, an insulating layer provided between the p-type region and the n-type region, and a MOS capacitor and a bipolar transistor. 2. Description of the Related Art An example of a photosensor assembly having a photosensitive device is shown in FIG. 1. As shown in FIG. 1, a photosensitive device 10 is formed on a silicon substrate 11. The photosensitive device 10 is formed in a pn junction structure. The silicon substrate 11 is provided with an n-type region 12 in which a p-type well layer is formed. In addition, an n-type region 13 is also formed in the silicon substrate 11 in order to suppress a reverse current. The silicon substrate 11 is connected to a grounding wire 14 via a p-type region 15 formed in the n-type region 12 and a p-type region 16 formed in the n-type region 13. The silicon substrate 11 also has a p-type region 17 formed in the p-type well layer. The n-type region 12 is connected to a positive power supply wire 18 via a p-type region 19. The p-type region 15 is connected to the positive power supply wire 18 via a p-type region 20. The photosensitive device 10 is provided with a p+ region 21 and an n+ region 22, both formed in the p-type region 17. The n+ region 22 serves as an external power supply terminal. A p-type region 23 is also formed in the n-type region 13. The p-type region 23 has a portion of the p-type region 17 at its center. The p-type region 23 is connected to the p-type region 20 via the n-type region 13. Thus, the p-type region 20 and the p-type region 23 form a diode. Two n-type regions 24 are also formed in the silicon substrate 11. The n-type region 24 is connected to one end of a bias voltage supply line 25. The other end of the bias voltage supply line 25 is connected to the n+ region 22. A capacitor 26 is connected between the n-type region 24 and the n+ region 22. An n-type region 27 is also formed in the silicon substrate